A-DATA Technology DDR3 1866 2OZ 4GB vs Corsair CMR32GX4M4A2666C16 8GB

总分

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分

Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

差异规格评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 33

左右 36% 更低的延时
更快的读取速度，GB/s

17.8 16.1

测试中的平均数值

Corsair CMR32GX4M4A2666C16 8GB

需要考虑的原因
Corsair CMR32GX4M4A2666C16 8GB

报告一个错误

更快的写入速度，GB/s

12.5 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1866 2OZ 4GB

Corsair CMR32GX4M4A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 33
读取速度，GB/s

17.8 16.1
写入速度，GB/s

10.0 12.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2771 3155

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingston KHX3466C19D4/8G 8GB

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Samsung M471B5273EB0-CK0 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

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Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB