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A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMV8GX4M1A2133C15 8GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Corsair CMV8GX4M1A2133C15 8GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
Corsair CMV8GX4M1A2133C15 8GB

Corsair CMV8GX4M1A2133C15 8GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 34
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 9.7
    测试中的平均数值
Corsair CMV8GX4M1A2133C15 8GB 需要考虑的原因
Corsair CMV8GX4M1A2133C15 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMV8GX4M1A2133C15 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 34
  • 读取速度，GB/s
    17.8 left arrow 14.8
  • 写入速度，GB/s
    10.0 left arrow 9.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 2583

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

Corsair CMV8GX4M1A2133C15 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
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Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK16GX4M2D2400C14 8GB
Corsair CMK16GX4M2D2400C14 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
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Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905744-011.A00G 32GB
Kingston 9905744-011.A00G 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM