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A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 34
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15.8
    测试中的平均数值
Micron Technology 16ATF2G64HZ-2G6E3 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.4 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 34
  • 读取速度，GB/s
    17.8 left arrow 15.8
  • 写入速度，GB/s
    10.0 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 2902

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT102464BA1339.M16 8GB
Crucial Technology CT102464BA1339.M16 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C16-16GFX 16GB
G Skill Intl F4-2400C16-16GFX 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston 9965604-001.D00G 16GB
Kingston 9965604-001.D00G 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
G Skill Intl F4-3600C19-16GSXF 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD48GU880-34A170X 8GB
Essencore Limited KD48GU880-34A170X 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK16GX4M2D3600C18 8GB
Corsair CMK16GX4M2D3600C18 8GB
内存RAM