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A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 43% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15.8
    测试中的平均数值
Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.5 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 37
  • 读取速度，GB/s
    17.8 left arrow 15.8
  • 写入速度，GB/s
    10.0 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 3075

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Kingston ACR16D3LFS1KBG/2G 2GB
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Corsair CMH32GX4M4D3600C18 8GB
Corsair CMH32GX4M4D3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM