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A-DATA Technology DDR4 2400 16GB
G Skill Intl F5-6000J3636F16G 16GB

A-DATA Technology DDR4 2400 16GB vs G Skill Intl F5-6000J3636F16G 16GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

总分
star star star star star
G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 14.4
    测试中的平均数值
G Skill Intl F5-6000J3636F16G 16GB 需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 30
    左右 -36% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 16GB
G Skill Intl F5-6000J3636F16G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    30 left arrow 22
  • 读取速度，GB/s
    16.8 left arrow 14.4
  • 写入速度，GB/s
    11.5 left arrow 13.4
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    3019 left arrow 3671

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

G Skill Intl F5-6000J3636F16G 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Kingston 9965604-001.D00G 16GB
Kingston 9965604-001.D00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
SK Hynix HMA84GR7MFR4N-UH 32GB
SK Hynix HMA84GR7MFR4N-UH 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CM4X16GC3000C16K4D 16GB
Corsair CM4X16GC3000C16K4D 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston CBD32D4S2D8HD-16 16GB
Kingston CBD32D4S2D8HD-16 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43BB1-CRC 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM