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A-DATA Technology DDR4 2400 16GB
INTENSO 5641160 8GB

A-DATA Technology DDR4 2400 16GB vs INTENSO 5641160 8GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

总分
star star star star star
INTENSO 5641160 8GB

INTENSO 5641160 8GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 10.2
    测试中的平均数值
INTENSO 5641160 8GB 需要考虑的原因
INTENSO 5641160 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 30
    左右 -30% 更低的延时

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 16GB
INTENSO 5641160 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 23
  • 读取速度，GB/s
    16.8 left arrow 16.1
  • 写入速度，GB/s
    11.5 left arrow 10.2
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3019 left arrow 2613

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

INTENSO 5641160 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CM4X4GF2400C16K4 4GB
Corsair CM4X4GF2400C16K4 4GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Apacer Technology GD2.1527WT.001 8GB
Apacer Technology GD2.1527WT.001 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-2400C14-16GVK 16GB
G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
G Skill Intl F4-4000C16-16GTZR 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2666C15-4GVK 4GB
G Skill Intl F4-2666C15-4GVK 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM