A-DATA Technology DDR4 2666 8GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

总分

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异规格评论

差异

A-DATA Technology DDR4 2666 8GB

需要考虑的原因
A-DATA Technology DDR4 2666 8GB

报告一个错误

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 32

左右 -39% 更低的延时
更快的读取速度，GB/s

19.6 15.5

测试中的平均数值
更快的写入速度，GB/s

18.8 11.8

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology DDR4 2666 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 23
读取速度，GB/s

15.5 19.6
写入速度，GB/s

11.8 18.8
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2968 4095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA84GR7MFR4N-UH 32GB

SK Hynix HMA84GR7MFR4N-UH 32GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905625-030.A00G 8GB

Kingston 9905625-030.A00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB