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A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 3200 2OZ 4GB vs A-DATA Technology DDR4 2400 16GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

差异 规格 评论

差异

A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 11.5
    测试中的平均数值
A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误

规格

完整的技术规格清单
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 2400 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    17.2 left arrow 16.8
  • 写入速度，GB/s
    13.8 left arrow 11.5
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3409 left arrow 3019

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Panram International Corporation PUD42133C138G4NJK 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMWX16GC3200C16W2E 16GB
Corsair CMWX16GC3200C16W2E 16GB
内存RAM