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A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3200 2OZ 4GB vs A-DATA Technology DDR4 3000 2OZ 8GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

差异 规格 评论

差异

A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 32
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 13.1
    测试中的平均数值
A-DATA Technology DDR4 3000 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3000 2OZ 8GB
报告一个错误

规格

完整的技术规格清单
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 32
  • 读取速度，GB/s
    17.2 left arrow 16.9
  • 写入速度，GB/s
    13.8 left arrow 13.1
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3409 left arrow 3196

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology DDR4 3000 2OZ 8GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4X4GF2133C13K4 4GB
Corsair CM4X4GF2133C13K4 4GB
内存RAM
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Kingston 99U5471-033.A00LF 4GB
Kingston 99U5471-033.A00LF 4GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C17-16GTZ 16GB
G Skill Intl F4-3600C17-16GTZ 16GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Panram International Corporation PUD42133C138G4NJK 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM