A-DATA Technology DOVF1B163G2G 2GB vs Corsair CMD16GX4M2B2400C10 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值

Corsair CMD16GX4M2B2400C10 8GB

需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

14.0 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMD16GX4M2B2400C10 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,315.2 18.2
写入速度，GB/s

1,925.7 14.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 3538

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-3200C16-4GVK 4GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston 9905471-006.A01LF 4GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Samsung M471B5173QH0-YK0 4GB

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Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

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Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

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Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB