A-DATA Technology DOVF1B163G2G 2GB vs Crucial Technology BLS16G4D26BFSE.16FD 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Crucial Technology BLS16G4D26BFSE.16FD 16GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

Crucial Technology BLS16G4D26BFSE.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSE.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 56

左右 -70% 更低的延时
更快的写入速度，GB/s

11.8 1,925.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 33
读取速度，GB/s

4,315.2 16.7
写入速度，GB/s

1,925.7 11.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

658 3107

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HP16D3LS1KBGH/4G 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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G Skill Intl F4-3200C15-8GTZSW 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB