A-DATA Technology DOVF1B163G2G 2GB vs Crucial Technology CT16G4DFRA32A.C16FN 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

Crucial Technology CT16G4DFRA32A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA32A.C16FN 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 56

左右 -44% 更低的延时
更快的写入速度，GB/s

11.3 1,925.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 39
读取速度，GB/s

4,315.2 14.9
写入速度，GB/s

1,925.7 11.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

658 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston CBD32D4S2S1ME-8 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Kingston 9905403-174.A00LF 2GB

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V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB