A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-3000C16-16GRS 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

G Skill Intl F4-3000C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 56

左右 -81% 更低的延时
更快的写入速度，GB/s

14.7 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C16-16GRS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 31
读取速度，GB/s

4,315.2 17.7
写入速度，GB/s

1,925.7 14.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. GR2400S464L17/16G 16GB

Wilk Elektronik S.A. GR2400S464L17/16G 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK16GX4M1C3000C16 16GB

Corsair CMK16GX4M1C3000C16 16GB