A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-3866C18-8GTZR 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值

G Skill Intl F4-3866C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

14.5 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3866C18-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,315.2 18.0
写入速度，GB/s

1,925.7 14.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 3531

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMU32GX4M4C3000C15 8GB

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Micron Technology 4ATF1G64AZ-3G2B1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Apacer Technology GD2.1527WC.001 8GB

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