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A-DATA Technology DOVF1B163G2G 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB

A-DATA Technology DOVF1B163G2G 2GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20
    测试中的平均数值
Hyundai Inc AR36C18S8K2HU416R 8GB 需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 56
    左右 -195% 更低的延时
  • 更快的写入速度，GB/s
    17.5 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 19
  • 读取速度，GB/s
    4,315.2 left arrow 20.0
  • 写入速度，GB/s
    1,925.7 left arrow 17.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    658 left arrow 3499

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C18-8GTZRX 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C15-8GVB 8GB
G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston MSI24D4U7S8MH-8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C14-16GTZR 16GB
G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM