A-DATA Technology DOVF1B163G2G 2GB vs Kingston 9965589-030.D01G 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

Kingston 9965589-030.D01G 8GB

需要考虑的原因
Kingston 9965589-030.D01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更快的读取速度，GB/s

9.9 4

测试中的平均数值
更快的写入速度，GB/s

8.9 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9965589-030.D01G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

4,315.2 9.9
写入速度，GB/s

1,925.7 8.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CM4X8GE2400C14K4 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

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G Skill Intl F4-3600C16-16GVKC 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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PUSKILL DDR3 1600 8G 8GB

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Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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G Skill Intl F4-3200C16-8GIS 8GB

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

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G Skill Intl F4-3200C16-4GTZB 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3866C18-4GTZ 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB