A-DATA Technology DOVF1B163G2G 2GB vs Panram International Corporation PUD42400C154GNJW 4GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Panram International Corporation PUD42400C154GNJW 4GB

需要考虑的原因
Panram International Corporation PUD42400C154GNJW 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

8.7 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Panram International Corporation PUD42400C154GNJW 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,315.2 13.7
写入速度，GB/s

1,925.7 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 2193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-4400C18-8GTRG 8GB