A-DATA Technology DOVF1B163G2G 2GB vs Patriot Memory (PDP Systems) PSD416G320081 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 18.9

测试中的平均数值

Patriot Memory (PDP Systems) PSD416G320081 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G320081 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更快的写入速度，GB/s

15.2 1,925.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

4,315.2 18.9
写入速度，GB/s

1,925.7 15.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

658 3621

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AO2P32NCSV1-BEVS 16GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

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Corsair CMX8GX3M2A2000C9 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology BL8G32C16U4W.M8FE1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB