RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A5143DB0-CPB 4GB
比较
A-DATA Technology DOVF1B163G2G 2GB vs Samsung M393A5143DB0-CPB 4GB
总分
A-DATA Technology DOVF1B163G2G 2GB
总分
Samsung M393A5143DB0-CPB 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
更快的读取速度,GB/s
4
10.4
测试中的平均数值
需要考虑的原因
Samsung M393A5143DB0-CPB 4GB
报告一个错误
低于PassMark测试中的延时,ns
54
56
左右 -4% 更低的延时
更快的写入速度,GB/s
8.5
1,925.7
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A5143DB0-CPB 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
54
读取速度,GB/s
4,315.2
10.4
写入速度,GB/s
1,925.7
8.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
658
2226
A-DATA Technology DOVF1B163G2G 2GB RAM的比较
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Samsung M393A5143DB0-CPB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology F6451U66G1600G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A5143DB0-CPB 4GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA81GU6CJR8N-XN 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMSX32GX4M2A3000C18 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Kingston 9905702-010.A00G 8GB
Corsair CMD16GX4M4A2666C16 4GB
Kingston ACR16D3LS1MNG/8G 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMK32GX4M2A2800C16 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CM4X16GE2666C18S4 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMSX64GX4M4A2666C18 16GB
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Micron Technology 16KTF1G64HZ-1G9E2 8GB
DSL Memory D4SS1G082SH21A-B 16GB
报告一个错误
×
Bug description
Source link