A-DATA Technology DOVF1B163G2G 2GB vs Samsung M471A1K43CB1-CRCR 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值

Samsung M471A1K43CB1-CRCR 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRCR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 56

左右 -143% 更低的延时
更快的写入速度，GB/s

6.9 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Samsung M471A1K43CB1-CRCR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 23
读取速度，GB/s

4,315.2 14.7
写入速度，GB/s

1,925.7 6.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 2231

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Samsung M471A2K43DB1-CTD 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Samsung M471A1K43CB1-CRCR 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston 9905598-028.A00G 8GB

Kingston 9905598-028.A00G 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB