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A-DATA Technology DQVE1908 512MB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
比较
A-DATA Technology DQVE1908 512MB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB
总分
A-DATA Technology DQVE1908 512MB
总分
A-DATA Technology AO1P24HC4R1-BSIS 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
更快的读取速度,GB/s
2
14.9
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
66
左右 -83% 更低的延时
更快的写入速度,GB/s
8.2
1,557.9
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1908 512MB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
36
读取速度,GB/s
2,775.5
14.9
写入速度,GB/s
1,557.9
8.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
382
2281
A-DATA Technology DQVE1908 512MB RAM的比较
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KGTWW1-MIE 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-16GFT 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Panram International Corporation PUD42400C154G2NJW 4GB
Samsung M393B1K70QB0-CK0 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
Samsung M471B5673FH0-CF8 2GB
Avant Technology J642GU42J9266N4 16GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Kingston HP32D4S2S8ME-16 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M2C3200C16 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4A2666C15 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Samsung M393B1K70CH0-CH9 8GB
V-Color Technology Inc. TC416G24D817 16GB
报告一个错误
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Bug description
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