A-DATA Technology DQVE1908 512MB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 19

测试中的平均数值

A-DATA Technology DDR4 3600 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 66

左右 -164% 更低的延时
更快的写入速度，GB/s

14.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

A-DATA Technology DDR4 3600 2OZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 25
读取速度，GB/s

2,775.5 19.0
写入速度，GB/s

1,557.9 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Apacer Technology D22.23263S.002 16GB

Apacer Technology D22.23263S.002 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston HP32D4U8S8HD-8X 8GB

Kingston HP32D4U8S8HD-8X 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston HP32D4U2S8ME-16 16GB

Kingston HP32D4U2S8ME-16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB