A-DATA Technology DQVE1908 512MB vs Corsair CMD16GX4M4B3333C16 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 19.4

测试中的平均数值

Corsair CMD16GX4M4B3333C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3333C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 66

左右 -267% 更低的延时
更快的写入速度，GB/s

15.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Corsair CMD16GX4M4B3333C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 18
读取速度，GB/s

2,775.5 19.4
写入速度，GB/s

1,557.9 15.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMD16GX4M4B3333C16 4GB

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Samsung M378A1G43EB1-CRC 8GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology CT32G4DFD832A.C16FE 32GB

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Kingston HP698651-154-MCN 8GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMW32GX4M2Z2933C16 16GB

Corsair CMW32GX4M2Z2933C16 16GB