A-DATA Technology DQVE1908 512MB vs Cortus SAS 8ATF51264AZ-2G1A1 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

低于PassMark测试中的延时，ns

66 74

左右 11% 更低的延时
更快的读取速度，GB/s

2 13.9

测试中的平均数值

Cortus SAS 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Cortus SAS 8ATF51264AZ-2G1A1 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 74
读取速度，GB/s

2,775.5 13.9
写入速度，GB/s

1,557.9 7.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 1679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMW16GX4M2D3600C18 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB