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A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB

A-DATA Technology DQVE1908 512MB vs Crucial Technology BLS4G4D240FSE.8FBD2 4GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.4
    测试中的平均数值
Crucial Technology BLS4G4D240FSE.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 66
    左右 -187% 更低的延时
  • 更快的写入速度，GB/s
    12.3 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 23
  • 读取速度，GB/s
    2,775.5 left arrow 16.4
  • 写入速度，GB/s
    1,557.9 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2723

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X8GD3200C16K2E 8GB
Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M2E4000C19 8GB
Corsair CMK16GX4M2E4000C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965589-030.D01G 8GB
Kingston 9965589-030.D01G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMR32GX4M4C3000C15 8GB
Corsair CMR32GX4M4C3000C15 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM