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A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-16GRS 16GB

A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3000C16-16GRS 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3000C16-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3000C16-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 66
    左右 -113% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-16GRS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 31
  • 读取速度，GB/s
    2,775.5 left arrow 17.7
  • 写入速度，GB/s
    1,557.9 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3482

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

G Skill Intl F4-3000C16-16GRS 16GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-16GRS 16GB
G Skill Intl F4-3000C16-16GRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Apacer Technology D22.23263S.002 16GB
Apacer Technology D22.23263S.002 16GB
内存RAM
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
内存RAM
Corsair CM3X1G1600C9DHX 1GB
Corsair CM3X1G1600C9DHX 1GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Apacer Technology 78.DAGQ7.40B0B 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X4GF2133C13K4 4GB
Corsair CM4X4GF2133C13K4 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F4-2400C15-8GIS 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C18-16GRS 16GB
G Skill Intl F4-2666C18-16GRS 16GB
内存RAM