A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

G Skill Intl F4-3466C18-8GTZRXB 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 66

左右 -288% 更低的延时
更快的读取速度，GB/s

20.9 2

测试中的平均数值
更快的写入速度，GB/s

16.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3466C18-8GTZRXB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 17
读取速度，GB/s

2,775.5 20.9
写入速度，GB/s

1,557.9 16.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation L421008G4C1528K34O8A 8GB

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Corsair CMK64GX4M4B3000C15 16GB

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Kingston K1N7HK-ELC 2GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMU32GX4M2C3000C15 16GB

Corsair CMU32GX4M2C3000C15 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Samsung M391A1K43BB1-CRC 8GB

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A-DATA Technology DDR2 800G 2GB

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Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Kllisre 0000 8GB

Kllisre 0000 8GB