A-DATA Technology DQVE1908 512MB vs Kingston 9965589-031.D01G 2GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Kingston 9965589-031.D01G 2GB

Kingston 9965589-031.D01G 2GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 10.9

测试中的平均数值

Kingston 9965589-031.D01G 2GB

需要考虑的原因
Kingston 9965589-031.D01G 2GB

报告一个错误

低于PassMark测试中的延时，ns

47 66

左右 -40% 更低的延时
更快的写入速度，GB/s

7.5 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Kingston 9965589-031.D01G 2GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 47
读取速度，GB/s

2,775.5 10.9
写入速度，GB/s

1,557.9 7.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 2211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9965589-031.D01G 2GB

Kingston 9965589-031.D01G 2GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Kingston 99U5471-025.A00LF 4GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB