A-DATA Technology DQVE1908 512MB vs Kingston 9965639-002.A01G 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Kingston 9965639-002.A01G 8GB

Kingston 9965639-002.A01G 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

Kingston 9965639-002.A01G 8GB

需要考虑的原因
Kingston 9965639-002.A01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 66

左右 -78% 更低的延时
更快的写入速度，GB/s

12.8 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Kingston 9965639-002.A01G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 37
读取速度，GB/s

2,775.5 17.9
写入速度，GB/s

1,557.9 12.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 2898

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GS6AFR8N-TF 8GB

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PNY Electronics PNY 2GB

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A-DATA Technology AO1P32NC8T1-BCSS 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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G Skill Intl F4-4000C18-16GTRS 16GB

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Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

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Crucial Technology BLS8G4S26BFSD.16FD2 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M471A1A43CB1-CRC 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB