A-DATA Technology DQVE1908 512MB vs Kingston KHX2933C17D4/8G 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.8

测试中的平均数值

Kingston KHX2933C17D4/8G 8GB

需要考虑的原因
Kingston KHX2933C17D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 66

左右 -154% 更低的延时
更快的写入速度，GB/s

14.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Kingston KHX2933C17D4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 26
读取速度，GB/s

2,775.5 17.8
写入速度，GB/s

1,557.9 14.9
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

382 3617

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Neo Forza NMUD480E82-2666 8GB

Neo Forza NMUD480E82-2666 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M392B5273CH0-YH9 4GB

Samsung M392B5273CH0-YH9 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMT16GX4M2K4266C19 8GB

Corsair CMT16GX4M2K4266C19 8GB