A-DATA Technology DQVE1908 512MB vs Micron Technology 16ATF1G64HZ-2G1B1 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 13.8

测试中的平均数值

Micron Technology 16ATF1G64HZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 66

左右 -69% 更低的延时
更快的写入速度，GB/s

10.5 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 39
读取速度，GB/s

2,775.5 13.8
写入速度，GB/s

1,557.9 10.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology VDQVE1B16 2GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

A-DATA Technology DQKD1A08 1GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston KKN2NM-MIE 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB