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A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF2G72PZ-2G1A2 16GB

A-DATA Technology DQVE1908 512MB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 10.2
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 66
    左右 -27% 更低的延时
  • 更快的写入速度，GB/s
    8.2 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17500 left arrow 6400
    左右 2.73 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 52
  • 读取速度，GB/s
    2,775.5 left arrow 10.2
  • 写入速度，GB/s
    1,557.9 left arrow 8.2
  • 内存带宽，mbps
    6400 left arrow 17500
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow no data
  • 排名PassMark (越多越好)
    382 left arrow 2319

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK32GX4M4B3600C18 8GB
Corsair CMK32GX4M4B3600C18 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM