A-DATA Technology DQVE1908 512MB vs Patriot Memory (PDP Systems) PSD416G266681 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

Patriot Memory (PDP Systems) PSD416G266681 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G266681 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 66

左右 -106% 更低的延时
更快的写入速度，GB/s

10.2 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Patriot Memory (PDP Systems) PSD416G266681 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 32
读取速度，GB/s

2,775.5 14.9
写入速度，GB/s

1,557.9 10.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Kingston 9905403-515.A00LF 8GB

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G Skill Intl F4-3200C14-8GTZ 8GB

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Samsung M471B1G73QH0-YK0 8GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB