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A-DATA Technology DQVE1908 512MB
Samsung M378A5244CB0-CRC 4GB

A-DATA Technology DQVE1908 512MB vs Samsung M378A5244CB0-CRC 4GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15
    测试中的平均数值
Samsung M378A5244CB0-CRC 4GB 需要考虑的原因
Samsung M378A5244CB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 66
    左右 -83% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Samsung M378A5244CB0-CRC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 36
  • 读取速度，GB/s
    2,775.5 left arrow 15.0
  • 写入速度，GB/s
    1,557.9 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2247

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Samsung M378A5244CB0-CRC 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DQVE1908 512MB
Samsung M378A5244CB0-CRC 4GB
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内存RAM
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内存RAM
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内存RAM
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