A-DATA Technology DQVE1908 512MB vs Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 19.4

测试中的平均数值

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 66

左右 -247% 更低的延时
更快的写入速度，GB/s

15.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 19
读取速度，GB/s

2,775.5 19.4
写入速度，GB/s

1,557.9 15.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 3397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4SFS624A.C4FB 4GB

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Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

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Corsair CMD8GX4M2B3600C18 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX3200C16D4/8GX 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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G Skill Intl F4-2400C15-8GTZR 8GB

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Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB