AMD AE34G2139U2 4GB vs Crucial Technology BL32G32C16S4B.M16FB1 32GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

Crucial Technology BL32G32C16S4B.M16FB1 32GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

Crucial Technology BL32G32C16S4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16S4B.M16FB1 32GB

报告一个错误

低于PassMark测试中的延时，ns

36 56

左右 -56% 更低的延时
更快的读取速度，GB/s

17.1 7.4

测试中的平均数值
更快的写入速度，GB/s

14.9 5.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 36
读取速度，GB/s

7.4 17.1
写入速度，GB/s

5.6 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1462 3449

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HYMP112U64CP8-Y5 1GB

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Crucial Technology CT8G4DFD8213.C16FAD1 8GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

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Kingston KHX1600C9D3/4G 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB