RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
AMD AE34G2139U2 4GB
Kingston 9905744-066.A00G 32GB

AMD AE34G2139U2 4GB vs Kingston 9905744-066.A00G 32GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Kingston 9905744-066.A00G 32GB 需要考虑的原因
Kingston 9905744-066.A00G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 56
    左右 -19% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Kingston 9905744-066.A00G 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 47
  • 读取速度，GB/s
    7.4 left arrow 17.8
  • 写入速度，GB/s
    5.6 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3099

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Kingston 9905744-066.A00G 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Kingston 9905744-066.A00G 32GB
Kingston 9905744-066.A00G 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905734-059.A00G 16GB
Kingston 9905734-059.A00G 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Essencore Limited KD48GU880-32A160T 8GB
Essencore Limited KD48GU880-32A160T 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905712-008.A00G 16GB
Kingston 9905712-008.A00G 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMU32GX4M2D3200C16 16GB
Corsair CMU32GX4M2D3200C16 16GB
内存RAM