AMD R5316G1609U2K 8GB vs Apacer Technology 78.CAGRN.40C0B 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Apacer Technology 78.CAGRN.40C0B 8GB

需要考虑的原因
Apacer Technology 78.CAGRN.40C0B 8GB

报告一个错误

低于PassMark测试中的延时，ns

58 73

左右 -26% 更低的延时
更快的读取速度，GB/s

17.4 6.3

测试中的平均数值
更快的写入速度，GB/s

8.5 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 58
读取速度，GB/s

6.3 17.4
写入速度，GB/s

5.2 8.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2125

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451R7AFR8N-TF 4GB

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Samsung M471B5273DH0-CK0 4GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA82GS6JJR8N-VK 16GB

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AMD R5316G1609U2K 8GB

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Apacer Technology 78.CAGRN.40C0B 8GB

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Crucial Technology CT8G4SFS8213.M8FB 8GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

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A-DATA Technology VDQVE1B16 2GB

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Panram International Corporation PUD42400C154GNJW 4GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

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Mushkin 99[2/7/4]204F 4GB