AMD R5316G1609U2K 8GB vs Corsair CM4B8G1J2800K14K 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Corsair CM4B8G1J2800K14K 8GB

Corsair CM4B8G1J2800K14K 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Corsair CM4B8G1J2800K14K 8GB

需要考虑的原因
Corsair CM4B8G1J2800K14K 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 73

左右 -170% 更低的延时
更快的读取速度，GB/s

17.4 6.3

测试中的平均数值
更快的写入速度，GB/s

13.1 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Corsair CM4B8G1J2800K14K 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 27
读取速度，GB/s

6.3 17.4
写入速度，GB/s

5.2 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMK16GX4M1Z3600C18 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMU32GX4M2C3000C15 16GB

Corsair CMU32GX4M2C3000C15 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB