AMD R5316G1609U2K 8GB vs Crucial Technology BL8G32C16U4W.M8FE 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology BL8G32C16U4W.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4W.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的读取速度，GB/s

18.6 6.3

测试中的平均数值
更快的写入速度，GB/s

15.4 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

6.3 18.6
写入速度，GB/s

5.2 15.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3200C16-8GSXFB 8GB

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Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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SK Hynix HMA451R7MFR8N-TF 4GB

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Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB