AMD R5316G1609U2K 8GB vs Crucial Technology BLS8G4D240FSCK.8FD 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology BLS8G4D240FSCK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSCK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的读取速度，GB/s

17 6.3

测试中的平均数值
更快的写入速度，GB/s

13.4 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

6.3 17.0
写入速度，GB/s

5.2 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-4133C19-4GTZ 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Kingston KF2666C15S4/8G 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB