AMD R5316G1609U2K 8GB vs G Skill Intl F4-2400C17-8GDBVR 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-2400C17-8GDBVR 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GDBVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的读取速度，GB/s

18.3 6.3

测试中的平均数值
更快的写入速度，GB/s

12.5 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

6.3 18.3
写入速度，GB/s

5.2 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS8G4D240FSCK.8FD 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Corsair CMW128GX4M4D3600C18 32GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Samsung M471B5673FH0-CF8 2GB

Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB