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AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C18-16GTRG 16GB

AMD R5316G1609U2K 8GB vs G Skill Intl F4-3600C18-16GTRG 16GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
G Skill Intl F4-3600C18-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-3600C18-16GTRG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 73
    左右 -161% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 28
  • 读取速度，GB/s
    6.3 left arrow 18.0
  • 写入速度，GB/s
    5.2 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3889

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

G Skill Intl F4-3600C18-16GTRG 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Corsair CMK16GX4M4C3200C15 4GB
Corsair CMK16GX4M4C3200C15 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905678-177.A00G 8GB
Kingston 9905678-177.A00G 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kllisre 8GB
Kllisre 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 99U5702-095.A00G 8GB
Kingston 99U5702-095.A00G 8GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
G Skill Intl F4-3600C19-16GSXF 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2933C14-8GTZRX 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMD16GX4M2B3466C16 8GB
Corsair CMD16GX4M2B3466C16 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M471A1A43CB1-CRC 8GB
Samsung M471A1A43CB1-CRC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM