AMD R5316G1609U2K 8GB vs G Skill Intl F4-4000C15-8GTRG 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-4000C15-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4000C15-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的读取速度，GB/s

21.6 6.3

测试中的平均数值
更快的写入速度，GB/s

19.4 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

6.3 21.6
写入速度，GB/s

5.2 19.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 4250

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMK64GX4M2D3600C18 32GB

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Kingston KHX3000C15/16GX 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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G Skill Intl F4-4000C15-8GTZR 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Kingston 9965525-155.A00LF 8GB

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Samsung V-GeN D4S4GL30A16TS5 4GB