AMD R5316G1609U2K 8GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 73

左右 -83% 更低的延时
更快的读取速度，GB/s

13.4 6.3

测试中的平均数值
更快的写入速度，GB/s

11.3 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 40
读取速度，GB/s

6.3 13.4
写入速度，GB/s

5.2 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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A-DATA Technology AD73I1B1672EG 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2666C15-8GVB 8GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8KTF51264AZ-1G6E1 4GB

Micron Technology 8KTF51264AZ-1G6E1 4GB