AMD R5316G1609U2K 8GB vs Kingston 9905712-008.A00G 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Kingston 9905712-008.A00G 16GB

需要考虑的原因
Kingston 9905712-008.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 -181% 更低的延时
更快的读取速度，GB/s

16 6.3

测试中的平均数值
更快的写入速度，GB/s

12.4 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Kingston 9905712-008.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 26
读取速度，GB/s

6.3 16.0
写入速度，GB/s

5.2 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

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Crucial Technology CT8G4DFD824A.C16FBD1 8GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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G Skill Intl F4-2400C15-16GFT 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

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G Skill Intl F4-2800C14-16GVK 16GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

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Kingston 9905403-134.A00LF 2GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

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G Skill Intl F4-4000C19-4GVK 4GB

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Kingston 9965433-034.A00LF 4GB

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB