AMD R5316G1609U2K 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 73

左右 -115% 更低的延时
更快的读取速度，GB/s

15.6 6.3

测试中的平均数值
更快的写入速度，GB/s

11.2 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 34
读取速度，GB/s

6.3 15.6
写入速度，GB/s

5.2 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KVR533D2N4 512MB

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G Skill Intl F4-2400C17-8GVR 8GB

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Samsung M378A1K43BB1-CTD 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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Smart Modular SF4722G4CKHH6DFSDS 16GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology BLS8G4D240FSA.M16FAD 8GB

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Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB