AMD R5316G1609U2K 8GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 73

左右 -128% 更低的延时
更快的读取速度，GB/s

15.5 6.3

测试中的平均数值
更快的写入速度，GB/s

11.8 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 32
读取速度，GB/s

6.3 15.5
写入速度，GB/s

5.2 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMK32GX4M4A2400C16 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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A-DATA Technology AO1P24HCST2-BSCS 16GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Nanya Technology M471A5143EB1-CRC 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT16G4SFD8213.C16FAD 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M2Z2400C16 16GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB