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AMD R5316G1609U2K 8GB
Samsung M471A1K43DB1-CTD 8GB

AMD R5316G1609U2K 8GB vs Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 73
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Samsung M471A1K43DB1-CTD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 35
  • 读取速度，GB/s
    6.3 left arrow 15.7
  • 写入速度，GB/s
    5.2 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2767

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMW64GX4M4Z2933C16 16GB
Corsair CMW64GX4M4Z2933C16 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Heoriady M378A1K43BB2-CTD 8GB
Heoriady M378A1K43BB2-CTD 8GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT451U6AFR8A-PB 4GB
SK Hynix HMT451U6AFR8A-PB 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4000C16-16GVKA 16GB
G Skill Intl F4-4000C16-16GVKA 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM