AMD R5316G1609U2K 8GB vs Samsung M474A4G43MB1-CTD 32GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Samsung M474A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M474A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

19.7 6.3

测试中的平均数值
更快的写入速度，GB/s

14.8 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Samsung M474A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

6.3 19.7
写入速度，GB/s

5.2 14.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 3671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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G Skill Intl F4-3200C14-8GTZKW 8GB

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